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Features of the IGBT Module X Series
TRIAC Driver Optocouplers. IGBT/MOSFET Gate Drivers Optocouplers. Emitting Diodes (8) Photo Sensor (6) Photo Sensor Transistor (9) Reflective Sensor (3) High Performance Optocouplers. High Performance Transistor Optocouplers (22) High Speed Logic Gate Optocouplers (27) Low Voltage, High Performance Optocouplers (13) Specific Function. IGBT is the short form of Insulated Gate Bipolar Transistor. It is a three-terminal semiconductor switching device that can be used for fast switching with high efficiency in many types of electronic devices.
In the 7th-generation X series, the IGBT and diode devices that constitute the modules have been made thinner and miniaturized to optimize the device structure. This has reduced the power loss during inverter operation compared with the conventional products (Fuji Electric's 6th-generation V Series). This contributes to energy saving and power cost reduction on the equipment on which the module is installed.
1. Low loss
The IGBT and diode devices that constitute these modules have been made thinner and miniaturized to optimize the device structure. This has reduced the power loss during inverter operation compared with the conventional products (Fuji Electric's 6th-generation V Series)
10% inverter loss reduction and 11°C chip temperature reduction (compared to 6th-generation V Series 75A, fc=8 kHz)
2. Size reduction
A newly developed insulating substrate has been applied in order to improve the module’s heat dissipation. This combined with the reduced power loss suppresses heat generation, which makes it possible to achieve a size reduction of approximately 36% from the conventional products.
3. High-temperature operation
The highly reliable and highly heat resistant package and the optimization of the chip have realized a continuous operating temperature of 175°C.
- Output can be increased by 35% from conventional products
- ΔTvj power cycle resistance is improved (to double that of previous products)
IGBT module X Series product lineup (including products under development) 650 V/1200 V/1700 V
PIM: Power Integrated Modules (product that integrates multiple circuits into a single module)
RC-IGBT: Reverse Conducting Insulated Gate Bipolar Transistor
EconoPIM™ and PrimePACK™ are registered trademarks of Infineon Technologies AG.
Igbt Gate Driver Ic
CHICAGO, January 13, 2021 - Littelfuse, Inc. (NASDAQ: LFUS), a global manufacturer of leading technologies in circuit protection, power control and sensing, today announced the CPC1561B Solid State Relay (SSR). The CPC1561B is the highest current (1 A, 60 V) normally open SSR currently available on the market to integrate both current-limiting and thermal shutdown circuits. The small, surface-mount CPC1561B SSR’s dual fault protection benefit provides a rugged solution for demanding applications that is not possible when using electro-mechanical relays and standard SSRs. Typical markets and applications for the CPC1561B include:
• Smart homes
• Building Automation
• Gaming
• Instrumentation
• Battery powered systems
Igbt Gate Driver Circuit Design
'The CPC1561B is ideal for markets and applications that cannot be down for long periods of time due to over current, over temperature and electrical stress,' said Steve Andrezyk, Director of Marketing for Littelfuse-IXYS Integrated Circuits. 'The CPC1561B output relay can survive harsh conditions and resume normal operation once the fault is removed, thus reducing product down-time and potentially eliminating service call time as the SSR both protects itself and resets to resume normal operation.'